BSC340N08NS3GATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of BSC340N08NS3GATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC340N08NS3GATMA1
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
BSC340N08NS3GATMA1 β ActiveInfineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | BSC340N08NS3GATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC340N08NS3GATMA1 | β |
| Technology | OptiMOS 3 (N-Channel Trench) | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc) | 23 A | β |
| Continuous Drain Current (ID, Ta) | 7 A | β |
| Pulsed Drain Current (IDM) | 92 A | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | 2.35 V |
| Gate-Source Voltage VGS max | +/- 20 V | β |
| Power Dissipation (Tc) | 32 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free | RoHS compliant, lead-free | Yes (RoHS compliant) |
| Channel Type | Single N-Channel | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | β |
| Avalanche Rating | Repetitive avalanche rated | β |
| Product Family | β | OptiMOS 5 30V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 128 A |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| Operating Junction Temperature | β | -55 C to +175 C |