BSD235CH6327XTSA1 vs BSS127H6327XTSA2 对比
详细并排对比 BSD235CH6327XTSA1 出自 Infineon 和 BSS127H6327XTSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ 量产中
规格对比
| 参数 | BSD235CH6327XTSA1 | BSS127H6327XTSA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.12 | $0.03 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | 500 mW (Ta) |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | — |
| 工作温度范围 | -55 °C to +150 °C (junction) | — |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| RoHS 状态 | Compliant (lead-free) | Compliant (lead-free) |
| MSL 等级 | 1 | [DATA_NEEDED: MSL rating] |
| 引脚数量 | 6 | 3 |
| FET Type | — | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 21 mA (Ta) |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed ID limit] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V (logic level, rated) |
| On-State Resistance (RDS(on)) max | — | 500 ohm at ID = 21 mA |
| 工作结温 | — | -55 C to +150 C |
| 封装 | — | SOT-23-3 (PG-SOT23) |
| dv/dt Rated | — | Yes |
| Automotive Qualification | — | AEC-Q101 |
| 无卤 | — | Yes, per IEC 61249-2-21 |