BSD235CH6327XTSA1 vs BSZ15DC02KDHXTMA1 对比

详细并排对比 BSD235CH6327XTSA1 出自 Infineon 和 BSZ15DC02KDHXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ 量产中

规格对比

参数 BSD235CH6327XTSA1 BSZ15DC02KDHXTMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.12 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Common drain (back-to-back source pair)
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA 5.1 A
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) 3.2 A
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
安装类型 Surface Mount Surface Mount
Technology OptiMOS™ low-voltage OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
工作温度范围 -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
RoHS 状态 Compliant (lead-free) —
MSL 等级 1 —
引脚数量 6 —
Part Number — BSZ15DC02KDHXTMA1
晶体管类型 — N-Channel + P-Channel (complementary pair)
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
工作结温 — -55 C to +175 C
封装 — PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

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