BSD235CH6327XTSA1 vs BSZ15DC02KDHXTMA1 Comparison

Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSZ15DC02KDHXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ Active

Specification Comparison

Parameter BSD235CH6327XTSA1 BSZ15DC02KDHXTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Common drain (back-to-back source pair)
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA 5.1 A
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) 3.2 A
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Mounting Type Surface Mount Surface Mount
Technology OptiMOS™ low-voltage OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
Operating Temperature Range -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
RoHS Status Compliant (lead-free) —
MSL Level 1 —
Pin Count 6 —
Part Number — BSZ15DC02KDHXTMA1
Transistor Type — N-Channel + P-Channel (complementary pair)
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
Operating Junction Temperature — -55 C to +175 C
Package — PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

Datasheets & Resources

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