BSL606SNH6327XTSA1 vs BTS3118NHUMA1 对比

详细并排对比 BSL606SNH6327XTSA1 出自 Infineon 和 BTS3118NHUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 ✓ 量产中
Infineon
BTS3118NHUMA1 BTS3118NHUMA1 - 2.17A Smart Low-Side Switch | Infineon

BTS3118NHUMA1 - 2.17A Smart Low-Side Switch | Infineon

BTS3118NHUMA1 ✓ 量产中

规格对比

参数 BSL606SNH6327XTSA1 BTS3118NHUMA1
品牌 Infineon Infineon
分类 MOSFETs Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.19 $0.62
晶体管类型 N-Channel MOSFET (Enhancement Mode) —
Technology OptiMOS3 trench MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Total Gate Charge (Qg) 5.6 nC (max) —
工作温度范围 -55C to +150C (Tj) —
封装 PG-TSOP6-6 (6-pin, SOT-23-6 compatible) PG-SOT223-4
安装类型 Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
RoHS 状态 Compliant (Pb-free plating) —
MSL 等级 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Switch Type — Low-Side Power Switch
输出配置 — 1:1
输出数量 — 1
Continuous Drain Current — 2.17 A
Operating Voltage (Vbb) — 6 V to 18 V nominal (overvoltage protected)
On-State Resistance (RDS(on)) — [DATA_NEEDED: typical RDS(on) at 25C]
Input Logic Level — Logic-level (3.3 V / 5 V MCU compatible)
Input Protection — ESD protected
Thermal Protection — Thermal shutdown with latch
Fault Protection — Overload, short-circuit, overvoltage, current limit
工作温度 — -40 C to +150 C junction
RoHS Compliance — Green product, RoHS compliant
Process Technology — Smart SIPMOS (vertical N-channel)

数据手册与资源

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