BSP296NH6327XTSA1 vs BSS214NWH6327XTSA1 对比

详细并排对比 BSP296NH6327XTSA1 出自 Infineon 和 BSS214NWH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP296NH6327XTSA1 BSP296NH6327XTSA1 - 100V N-Ch MOSFET, 1.2A, SOT-223 | Infineon

BSP296NH6327XTSA1 - 100V N-Ch MOSFET, 1.2A, SOT-223 | Infineon

BSP296NH6327XTSA1 ✓ 量产中
Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ 量产中

规格对比

参数 BSP296NH6327XTSA1 BSS214NWH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.33 $0.15
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSP296NH6327XTSA1 BSS214NWH6327XTSA1
FET Type N-Channel, Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta=25C 1.2 A —
Power Dissipation (PD) at Ta=25C 1.8 W —
On-Resistance RDS(on) max 600 mOhm —
封装 PG-SOT223-4 (4-pin, 3 leads + tab) PG-SOT323 (SOT-323-3)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction) —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
MSL 等级 1 (per JEDEC J-STD-020) —
Standard Packaging Tape & Reel, 1000 pcs/reel —
Technology Trench MOSFET MOSFET (Metal Oxide)
Series — OptiMOS
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) @ 25C — 1.5 A
Rds(on) Max @ Vgs=4.5V — 250 mOhm
Drive Voltage (Max Rds On, Min Rds On) — 2.5 V, 4.5 V
Power Dissipation (Pd) @ Ta=25C — 500 mW
工作温度 — -55C to +150C (junction)

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