BSP315PH6327XTSA1 vs BSS87H6327FTSA1 对比

详细并排对比 BSP315PH6327XTSA1 出自 Infineon 和 BSS87H6327FTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ 量产中
Infineon
BSS87H6327FTSA1 BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 ✓ 量产中

规格对比

参数 BSP315PH6327XTSA1 BSS87H6327FTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.31 $0.18
FET Type P-Channel N-Channel enhancement-mode
Technology OptiMOS (enhancement mode) —
Drain-Source Voltage (VDS) -60 V 240 V
Continuous Drain Current (ID) -1.17 A (Ta) 260 mA (Ta)
Power Dissipation (PD) 1.8 W (Ta) 1 W (Ta)
Gate-Source Voltage (VGS) ±20 V (max) +/-20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typical/min/max]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
工作温度范围 -55 C to +150 C (junction) -55C to +150C (junction)
封装 PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SOT89-4-2 (SOT-89)
安装类型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
MSL 等级 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Drain-Source On-Resistance (RDS(on)) — 6 ohm max at VGS=10V
引脚数量 — 3 (Gate / Drain / Source)
Automotive Qualification — AEC-Q101 qualified
RoHS 状态 — Compliant
Lead-Free / Pb-Free — Yes (Pb-free plating)
Process Technology — Vertical DMOS

数据手册与资源

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