BSS127H6327XTSA2 vs BSO613SPVGXUMA1 对比

详细并排对比 BSS127H6327XTSA2 出自 Infineon 和 BSO613SPVGXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS127H6327XTSA2 BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 ✓ 量产中

规格对比

参数 BSS127H6327XTSA2 BSO613SPVGXUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.03 $0.98
FET Type N-Channel SIPMOS, enhancement mode P-Channel
Drain-Source Voltage (VDS) 600 V -60 V
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max +/-V]
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) [DATA_NEEDED: VGS(th) typical and min/max values]
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
工作结温 -55 C to +150 C —
封装 SOT-23-3 (PG-SOT23) PG-DSO-8-6 (Power-SO-8)
安装类型 Surface Mount Surface Mount
引脚数量 3 8 (6 active, 2 thermal/NC)
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
RoHS 状态 Compliant (lead-free) Compliant
无卤 Yes, per IEC 61249-2-21 —
MSL 等级 [DATA_NEEDED: MSL rating] MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8)
Continuous Drain Current (ID) at TA=25C — -3.44 A
Power Dissipation (PD) at TA=25C — 2.5 W
Technology — OptiMOS (Trench)
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max at VGS=10V]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) max at VGS=4.5V]
工作温度范围 — -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Lead-Free — Yes
Avalanche Rated — Yes (per Infineon OptiMOS family)

数据手册与资源

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