BSS127H6327XTSA2 vs BSO613SPVGXUMA1 비교
다음의 상세 나란히 비교: BSS127H6327XTSA2 제조: Infineon 및 BSO613SPVGXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS127H6327XTSA2 | BSO613SPVGXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.03 | $0.98 |
| FET Type | N-Channel SIPMOS, enhancement mode | P-Channel |
| Drain-Source Voltage (VDS) | 600 V | -60 V |
| Continuous Drain Current (ID) | 21 mA (Ta) | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed ID limit] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS max +/-V] |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) | [DATA_NEEDED: VGS(th) typical and min/max values] |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA | — |
| Total Power Dissipation (Ptot) | 500 mW (Ta) | — |
| 동작 접합 온도 | -55 C to +150 C | — |
| 패키지 | SOT-23-3 (PG-SOT23) | PG-DSO-8-6 (Power-SO-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 | 8 (6 active, 2 thermal/NC) |
| dv/dt Rated | Yes | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 상태 | Compliant (lead-free) | Compliant |
| 할로겐 프리 | Yes, per IEC 61249-2-21 | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| Continuous Drain Current (ID) at TA=25C | — | -3.44 A |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Technology | — | OptiMOS (Trench) |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) max at VGS=4.5V] |
| 동작 온도 범위 | — | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes (per Infineon OptiMOS family) |