BSS606NH6327XTSA1 vs BSS87H6327FTSA1 对比
详细并排对比 BSS606NH6327XTSA1 出自 Infineon 和 BSS87H6327FTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS606NH6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.13 | $0.18 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Small Signal/Power | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 240 V |
| Continuous Drain Current (ID) | 3.2 A (Ta) | 260 mA (Ta) |
| Power Dissipation (PD) | 1 W (Ta) | 1 W (Ta) |
| On-Resistance (RDS(on)) | 60 mΩ max @ VGS=10 V | — |
| 封装 | PG-SOT-89 (TO-243AA) | PG-SOT89-4-2 (SOT-89) |
| 安装类型 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/min/max] |
| 工作结温 | -55°C to +150°C | — |
| Qualification | Automotive (per family page) | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等级 | 1 (per SOT-89 family standard) | 1 (per JEDEC J-STD-020) |
| Reel Quantity | 1000 pcs | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| 工作温度范围 | — | -55C to +150C (junction) |
| 引脚数量 | — | 3 (Gate / Drain / Source) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |