BSS83PH6327XTSA1 vs BSS308PEH6327XTSA1 对比
详细并排对比 BSS83PH6327XTSA1 出自 Infineon 和 BSS308PEH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ 量产中规格对比
| 参数 | BSS83PH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.11 | $0.11 |
| FET Type | P-Channel | — |
| Technology | MOSFET (Metal-Oxide Semiconductor) | — |
| Drain-Source Voltage (VDS) | -60 V | -30 V |
| Continuous Drain Current (ID) at TA=25C | 330 mA | — |
| Pulsed Drain Current (IDM) | 1.3 A | — |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 2.0 ohm (max) | — |
| Gate-Source Threshold Voltage (VGS(th)) | -1 V to -2.5 V (typ) | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Power Dissipation (PD) at TA=25C | 360 mW | — |
| 工作结温 | -55 C to +150 C | — |
| 封装 | PG-SOT23 (SOT-23-3) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | Automotive grade per Infineon | AEC-Q101 Automotive |
| Process Technology | SIPMOS / OptiMOS | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| 晶体管类型 | — | P-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| 工作温度范围 | — | -55 °C to +150 °C |
| 封装 / 外壳 | — | PG-SOT23 (SOT-23-3) |
| 引脚数 | — | 3 |
| Packaging | — | Tape & Reel (T/R) |
| Standard Reel Quantity | — | 3000 pcs |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |