BSS83PH6327XTSA1 vs BSS308PEH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS83PH6327XTSA1 by Infineon and BSS308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS83PH6327XTSA1 BSS83PH6327XTSA1 - 60V P-Channel MOSFET 330mA | Infineon

BSS83PH6327XTSA1 - 60V P-Channel MOSFET 330mA | Infineon

BSS83PH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS83PH6327XTSA1 BSS308PEH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.11 $0.11
FET Type P-Channel β€”
Technology MOSFET (Metal-Oxide Semiconductor) β€”
Drain-Source Voltage (VDS) -60 V -30 V
Continuous Drain Current (ID) at TA=25C 330 mA β€”
Pulsed Drain Current (IDM) 1.3 A β€”
Drain-Source On-Resistance (RDS(on)) at VGS=-10V 2.0 ohm (max) β€”
Gate-Source Threshold Voltage (VGS(th)) -1 V to -2.5 V (typ) β€”
Gate-Source Voltage (VGS) max +/- 20 V β€”
Power Dissipation (PD) at TA=25C 360 mW β€”
Operating Junction Temperature -55 C to +150 C β€”
Package PG-SOT23 (SOT-23-3) β€”
Mounting Type Surface Mount Surface Mount
Qualification Automotive grade per Infineon AEC-Q101 Automotive
Process Technology SIPMOS / OptiMOS β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS P (small signal / small power MOSFET)
Transistor Type β€” P-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) β€” -2 A (Ta)
RDS(on) Max β€” 80 mΞ© at VGS = -10 V
Gate-Source Voltage (VGS) Max β€” +/-20 V
Power Dissipation (PD) β€” 500 mW (Ta)
Operating Temperature Range β€” -55 Β°C to +150 Β°C
Package / Case β€” PG-SOT23 (SOT-23-3)
Number of Pins β€” 3
Packaging β€” Tape & Reel (T/R)
Standard Reel Quantity β€” 3000 pcs
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]

Datasheets & Resources

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