BSZ15DC02KDHXTMA1 vs BSD235CH6327XTSA1 对比
详细并排对比 BSZ15DC02KDHXTMA1 出自 Infineon 和 BSD235CH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ 量产中规格对比
| 参数 | BSZ15DC02KDHXTMA1 | BSD235CH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $0.12 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ15DC02KDHXTMA1 | — |
| 晶体管类型 | N-Channel + P-Channel (complementary pair) | — |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) | OptiMOS™ low-voltage |
| Drain-to-Source Voltage (VDS) Max | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 5.1 A | 950 mA |
| P-Channel Continuous Drain Current (ID) | 3.2 A | 530 mA (negative polarity) |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | — |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | — |
| Gate Drive Level | Super Logic level, 2.5 V rated | — |
| Configuration | Common drain (back-to-back source pair) | N+P complementary dual MOSFET |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | Yes / RoHS compliant | — |
| Part Family | — | OptiMOS™ |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Package Type | — | PG-SOT363-6-1 (SOT-363, 6-pin) |
| 工作温度范围 | — | -55 °C to +150 °C (junction) |
| Polarity | — | N-channel + P-channel |
| Channel Mode | — | Enhancement |
| RoHS 状态 | — | Compliant (lead-free) |
| MSL 等级 | — | 1 |
| 引脚数量 | — | 6 |