BSZ15DC02KDHXTMA1 vs BSD235CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSZ15DC02KDHXTMA1 by Infineon and BSD235CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ Active

Specification Comparison

Parameter BSZ15DC02KDHXTMA1 BSD235CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ15DC02KDHXTMA1 —
Transistor Type N-Channel + P-Channel (complementary pair) —
Technology OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) OptiMOS™ low-voltage
Drain-to-Source Voltage (VDS) Max 20 V —
N-Channel Continuous Drain Current (ID) 5.1 A 950 mA
P-Channel Continuous Drain Current (ID) 3.2 A 530 mA (negative polarity)
N-Channel RDS(on) Max [DATA_NEEDED: N-ch RDS(on) value in mohm] —
P-Channel RDS(on) Max 55 mOhm (per Infineon part summary) —
Gate Drive Level Super Logic level, 2.5 V rated —
Configuration Common drain (back-to-back source pair) N+P complementary dual MOSFET
Total Package Power Dissipation (PD) 2.5 W @ 25 C (per DigiKey listing) —
Operating Junction Temperature -55 C to +175 C —
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) —
Mounting Type Surface Mount Surface Mount
Avalanche Rated Yes —
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS Yes / RoHS compliant —
Part Family — OptiMOS™
Drain-to-Source Voltage (VDS) — 20 V
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Operating Temperature Range — -55 °C to +150 °C (junction)
Polarity — N-channel + P-channel
Channel Mode — Enhancement
RoHS Status — Compliant (lead-free)
MSL Level — 1
Pin Count — 6

Datasheets & Resources

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