CSD18503Q5A vs CSD17303Q5 对比

详细并排对比 CSD18503Q5A 出自 Texas Instruments 和 CSD17303Q5 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Texas Instruments
CSD18503Q5A CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A ✓ 量产中
Texas Instruments
CSD17303Q5 CSD17303Q5 - 30V N-Ch NexFET MOSFET 2.6mOhm | TI

CSD17303Q5 - 30V N-Ch NexFET MOSFET 2.6mOhm | TI

CSD17303Q5 ✓ 量产中

规格对比

参数 CSD18503Q5A CSD17303Q5
品牌 Texas Instruments Texas Instruments
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.85 $1.65
Polarity N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V —
On-Resistance (RDS(on)) 4.3 mOhm (3.4 mOhm typical) —
Continuous Drain Current (Ta) 19 A —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Ta) 3.1 W 3.2 W
Power Dissipation (Tc) 120 W —
Technology NexFET NexFET
封装 8-VSONP (DQJ), 5 mm x 6 mm VSON-CLIP (DQH) 8-pin, 5x6 mm
安装类型 Surface Mount Surface Mount
工作结温 -55C to +150C —
Configuration Single —
Gate Charge [DATA_NEEDED: Qg] [DATA_NEEDED: Qg value]
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
引脚数 8 —
Vds Drain-Source Voltage — 30 V
Id Continuous Drain Current (Ta) — 32 A
Id Continuous Drain Current (Tc) — 100 A
Rds(on) On-Resistance — 2.6 mOhm
Gate Drive Optimization — 5 V
Avalanche Rated — Yes
工作温度 — -55C to +150C
Terminal Plating — Pb-free
无卤 — Yes

数据手册与资源

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