CY14V104LA vs CY14V104LA-BA45XIT 对比

详细并排对比 CY14V104LA 出自 Infineon 和 CY14V104LA-BA45XIT 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
CY14V104LA-BA45XIT CY14V104LA-BA45XIT - 4Mb nvSRAM 45ns 3.3V | Infineon | Industrial

CY14V104LA-BA45XIT - 4Mb nvSRAM 45ns 3.3V | Infineon | Industrial

CY14V104LA-BA45XIT ✓ 量产中

规格对比

参数 CY14V104LA CY14V104LA-BA45XIT
品牌 Infineon Infineon
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $10.85 $4.60
Density 4 Mbit (512 K x 8 / 256 K x 16) 4096 kbits
存储器类型 Non-Volatile SRAM (nvSRAM) nvSRAM (Non-Volatile SRAM)
Operating Voltage 3.3 V (3.0 V min, 3.6 V max) —
Access Time 25 ns (BA25) or 45 ns (BA45) 45 ns
接口 Parallel (asynchronous SRAM-compatible) Parallel
Bus Width x8 / x16 selectable (BYTE pin) —
封装 48-FBGA (6 x 10 x 1.20 mm) 48-FBGA (6 x 10 mm, 1.20 mm height)
工作温度 -40 C to +85 C (industrial) -40C to +85C
STORE Time (typical) [DATA_NEEDED: STORE time in ms] —
RECALL Time (typical) [DATA_NEEDED: RECALL time in ms] —
Active Supply Current (Icc) [DATA_NEEDED: Icc active mA] —
Standby Current (Isb) [DATA_NEEDED: Isb uA] —
Hardware STORE Pin HSB (active low) —
Auto STORE on VCC Drop Yes (integrated VCc monitor) —
Read/Write Endurance Unlimited (SRAM side) Unlimited (SRAM mode)
Data Retention [DATA_NEEDED: retention years] —
RoHS 状态 Compliant RoHS Compliant
安装类型 Surface Mount Surface Mount
存储容量 — 4 Mbit
存储组织 — 512K x 8
Supply Voltage Range — 3 V (min VCC 2.7 V typical class, max 3.6 V)
Max Operating Voltage — 3.6 V
Automotive Qualified — No (industrial grade)
Memory Category — NVRAM, NVSRAM, SRAM Chip
Number of Words — 128 k
Bits per Word — 8 bits
Packaging — Tape & Reel (T/R)

数据手册与资源

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