CY62168EV30LL-45BVXI vs CY62167EV30LL-45BVXI 对比
详细并排对比 CY62168EV30LL-45BVXI 出自 Infineon 和 CY62167EV30LL-45BVXI 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
CY62167EV30LL-45BVXI - 16Mb SRAM 45ns 1M×16/2M×8 VFBGA-48 | Infineon
CY62167EV30LL-45BVXI ✓ 量产中规格对比
| 参数 | CY62168EV30LL-45BVXI | CY62167EV30LL-45BVXI |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.75 | $3.78 |
| 存储器类型 | Volatile SRAM (asynchronous) | Asynchronous SRAM (MoBL®) |
| Memory Family | MoBL (Micropower) SRAM | — |
| 存储容量 | 16 Mbit (2 M × 8) | — |
| 存储组织 | 2M × 8 | 1M × 16 / 2M × 8 (BYTE-pin configurable) |
| Access Time | 45 ns | 45 ns |
| Operating Voltage Range | 2.20 V to 3.60 V | — |
| Maximum Operating Voltage | 3.60 V | — |
| Minimum Operating Voltage | 2.20 V | — |
| Standby Current (typical) | 1.5 µA | — |
| Standby Current (maximum) | 12 µA | — |
| Active Current (typical @ 1 MHz) | 2.2 mA | — |
| 接口类型 | Parallel (asynchronous) | — |
| Chip Enable | CE1# (active low), CE2 (active high) | — |
| Write Enable | WE# (active low) | — |
| Output Enable | OE# (active low) | — |
| 封装 | 48-ball VFBGA (6 x 8) | 48-ball VFBGA (6 × 8 × 1 mm) |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| 工作温度 | -40 °C to +85 °C (Industrial) | -40 °C to +85 °C (Industrial) |
| MSL 等级 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant (Pb-free) |
| Density | — | 16 Mbit (16,777,216 bits) |
| Supply Voltage (VCC) | — | 2.2 V to 3.6 V |
| Active Current (1 MHz typical) | — | 2 mA |
| 接口 | — | Parallel, asynchronous |
| Package Code | — | BV48 |
| Standby Current | — | [DATA_NEEDED: standby current µA] |
| Byte Pin | — | Yes (BYTE# for ×8 / ×16 selection) |