DMN3190LDW-7 vs FDMC89521L 对比
详细并排对比 DMN3190LDW-7 出自 Diodes Incorporated 和 FDMC89521L 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ 量产中
规格对比
| 参数 | DMN3190LDW-7 | FDMC89521L |
|---|---|---|
| 品牌 | Diodes Incorporated | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.10 | $0.52 |
| FET Type | Dual N-Channel Enhancement Mode | 2 × N-Channel (Dual) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Gate-Source Voltage (VGS) | 20 V | — |
| Continuous Drain Current (ID) | 1 A | — |
| Power Dissipation (PD) | 320 mW | — |
| 封装 | SOT-363 (SC-70-6) 6-pin | 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C | — |
| Configuration | Dual, independent drains | Dual independent drain-source pairs |
| Technology | Silicon N-Channel MOSFET | POWERTRENCH shielded-gate trench MOSFET |
| Channel Mode | Enhancement | — |
| MSL 等级 | 1 (unlimited) | 1 (per onsemi product page) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | onsemi (Fairchild Semiconductor) |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ TA=25C | — | 8.2 A |
| Continuous Drain Current (Id) @ TC=25C | — | [DATA_NEEDED: TC-rated Id] |
| On-Resistance Rds(on) @ Vgs=10V | — | 17 mΩ |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Power Dissipation (TA=25C) | — | 1.9 W |
| Power Dissipation (TC=25C) | — | 16 W |
| 工作温度范围 | — | -55C to +150C (Tj) |
| Body Diode | — | Integrated N-channel body diode |