DMN3190LDW-7 vs FDMC89521L Comparison
Detailed side-by-side comparison of DMN3190LDW-7 by Diodes Incorporated and FDMC89521L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ Active
Specification Comparison
| Parameter | DMN3190LDW-7 | FDMC89521L |
|---|---|---|
| Brand | Diodes Incorporated | onsemi |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.10 | $0.52 |
| FET Type | Dual N-Channel Enhancement Mode | 2 × N-Channel (Dual) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Gate-Source Voltage (VGS) | 20 V | — |
| Continuous Drain Current (ID) | 1 A | — |
| Power Dissipation (PD) | 320 mW | — |
| Package | SOT-363 (SC-70-6) 6-pin | 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C | — |
| Configuration | Dual, independent drains | Dual independent drain-source pairs |
| Technology | Silicon N-Channel MOSFET | POWERTRENCH shielded-gate trench MOSFET |
| Channel Mode | Enhancement | — |
| MSL Level | 1 (unlimited) | 1 (per onsemi product page) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | onsemi (Fairchild Semiconductor) |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ TA=25C | — | 8.2 A |
| Continuous Drain Current (Id) @ TC=25C | — | [DATA_NEEDED: TC-rated Id] |
| On-Resistance Rds(on) @ Vgs=10V | — | 17 mΩ |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Power Dissipation (TA=25C) | — | 1.9 W |
| Power Dissipation (TC=25C) | — | 16 W |
| Operating Temperature Range | — | -55C to +150C (Tj) |
| Body Diode | — | Integrated N-channel body diode |