DMN3190LDW-7 vs JMTG070N06A 对比
详细并排对比 DMN3190LDW-7 出自 Diodes Incorporated 和 JMTG070N06A 出自 Jiejie Micro。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ 量产中
规格对比
| 参数 | DMN3190LDW-7 | JMTG070N06A |
|---|---|---|
| 品牌 | Diodes Incorporated | Jiejie Micro |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.10 | $0.45 |
| FET Type | Dual N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Gate-Source Voltage (VGS) | 20 V | — |
| Continuous Drain Current (ID) | 1 A | 70 A |
| Power Dissipation (PD) | 320 mW | — |
| 封装 | SOT-363 (SC-70-6) 6-pin | PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) |
| 安装类型 | Surface Mount | Surface Mount (SMD) |
| 工作温度 | -55C to +150C | — |
| Configuration | Dual, independent drains | Single N-channel MOSFET |
| Technology | Silicon N-Channel MOSFET | Advanced Trench MOSFET |
| Channel Mode | Enhancement | — |
| MSL 等级 | 1 (unlimited) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | Jiejie Micro (JJW) |
| Part Number | — | JMTG070N06A |
| Polarity / Type | — | N-channel Enhancement Mode |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| On-Resistance RDS(ON) | — | < 6 mOhm @ VGS = 10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Single Pulse Avalanche Energy (EAS) | — | IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) |
| Lead Status | — | Lead free / RoHS compliant |
| 工作温度范围 | — | [DATA_NEEDED: TJ max and operating range] |
| Thermal Resistance RthJA | — | [DATA_NEEDED: theta_JA] |