H5AN4G6NBJR-RDC vs H5AN4G6NBJR-UHC 对比

详细并排对比 H5AN4G6NBJR-RDC 出自 SK hynix 和 H5AN4G6NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G6NBJR-RDC H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC ✓ 量产中
SK hynix
H5AN4G6NBJR-UHC H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC ✓ 量产中

规格对比

参数 H5AN4G6NBJR-RDC H5AN4G6NBJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.15 $8.09
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gb —
存储组织 256M x 16 256M x 16
电源电压 1.2 V —
接口 CMOS, fully synchronous —
Package Code TFBGA (FBGA-96) —
Package Shape Rectangular —
Package Width 7.5 mm —
Number of Terminals 96 —
安装类型 Surface Mount Surface Mount
Temperature Grade OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet —
Self Refresh Auto / Self Refresh Auto self-refresh
Data Mask Function Yes Yes (DM)
Asynchronous Reset Yes Yes (RESET_n)
On-Die Termination Dynamic ODT Dynamic ODT
ZQ Calibration Yes Yes
Write Leveling Yes Yes
CRC Function Yes Yes (command/address CRC)
Lead-Free / Halogen-Free Yes (per datasheet cover: Lead-Free & Halogen-Free) —
Speed Grade -RDC (see manufacturer datasheet for validated data-rate bin) —
存储容量 — 4 Gbit
Clock Frequency — 1.6 GHz
Supply Voltage (VDD) — 1.14 V to 1.26 V
Technology — CMOS
工作温度 — -40C to +95C
封装 — FBGA-96 (PBGA-96)
RoHS 状态 — Compliant

数据手册与资源

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