H5AN4G6NBJR-UHC vs H5AN4G8NBJR-UHC 对比

详细并排对比 H5AN4G6NBJR-UHC 出自 SK hynix 和 H5AN4G8NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G6NBJR-UHC H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC ✓ 量产中
SK hynix
H5AN4G8NBJR-UHC H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC ✓ 量产中

规格对比

参数 H5AN4G6NBJR-UHC H5AN4G8NBJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $8.09 $3.18
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 4 Gbit —
存储组织 256M x 16 512M x 8
Clock Frequency 1.6 GHz —
Supply Voltage (VDD) 1.14 V to 1.26 V —
Technology CMOS CMOS DRAM
工作温度 -40C to +95C [DATA_NEEDED: operating temperature range]
封装 FBGA-96 (PBGA-96) TFBGA-78 (11 x 7.5 mm)
安装类型 Surface Mount Surface Mount
Self Refresh Auto self-refresh —
Data Mask Function Yes (DM) —
Asynchronous Reset Yes (RESET_n) —
On-Die Termination Dynamic ODT —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes (command/address CRC) —
RoHS 状态 Compliant Compliant (Rohs Code: Yes)
Density — 4 Gbit
数据速率 — 2400 Mbps (PC2400)
电源电压 — 1.2 V
接口 — DDR4 (JEDEC)
Lifecycle Code — Active
REACH Compliance — Compliant
Manufacturer — SK Hynix Inc.
CAS 延迟 — [DATA_NEEDED: CAS latency for -UHC speed bin]
Refresh — [DATA_NEEDED: refresh rate 1x/2x/4x support]

数据手册与资源

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