H5AN4G6NBJR-VKC vs H5AN4G8NBJR-VKC 对比
详细并排对比 H5AN4G6NBJR-VKC 出自 SK hynix 和 H5AN4G8NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G6NBJR-VKC | H5AN4G8NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $12.96 | $2.40 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | 4 Gb |
| Memory Organization | 256M x 16 | 512M x8 |
| 数据速率 | 2666 Mbps | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) | — |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) | 1.2 V |
| Operating Current | 38 mA (typical, per distributor data) | — |
| 接口 | Parallel | — |
| Technology | CMOS | CMOS DRAM |
| 工作温度 | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| 封装 | FBGA-96 / TFBGA (PBGA96) | FBGA-78 (7.5 x 11 mm) |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch | — |
| 安装类型 | Surface Mount | Surface Mount |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration; write leveling | — |
| Protection Functions | Asynchronous reset; CRC; data mask | — |
| Refresh | Auto self-refresh | [DATA_NEEDED: refresh rate] |
| RoHS 状态 | Compliant | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Packaging | Tray | Tray |
| Memory Interface | — | Parallel |
| Volatile / Non-Volatile | — | Volatile |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| 生命周期状态 | — | Active |