H5AN4G8NBJR-RDC vs H5AN4G8NBJR-UHCR 对比

详细并排对比 H5AN4G8NBJR-RDC 出自 SK hynix 和 H5AN4G8NBJR-UHCR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-RDC H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5AN4G8NBJR-RDC ✓ 量产中
SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ 量产中

规格对比

参数 H5AN4G8NBJR-RDC H5AN4G8NBJR-UHCR
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.95 $3.18
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gbit
存储组织 512M x 8 512M x 8
接口 DDR4 (Double Data Rate IV) DDR4 SSTL12
封装 78-ball FBGA 78-ball FBGA (11 mm x 7.5 mm)
安装类型 Surface Mount Surface Mount (BGA solder-down)
电源电压 [DATA_NEEDED: VDD supply voltage] 1.2 V (VDD)
数据速率 [DATA_NEEDED: speed grade Mbps] —
Bank Architecture 8 banks with 4 bank groups (x8) —
Refresh Auto-refresh and self-refresh [DATA_NEEDED: refresh rate 1x/2x specification]
Temperature Grade [DATA_NEEDED: operating temperature range] —
Termination On-Die Termination (ODT) —
RoHS 状态 Lead-Free & Halogen-Free (RoHS Compliant) Compliant
Process Technology CMOS —
Manufacturer SK hynix —
Family Series H5AN4G4/8/6NBJR —
Speed Grade — UH (DDR4-2400 class, PC2400)
Internal Prefetch — 8n
Operating Case Temperature — -40C to +85C (industrial range)
Extended Temperature Range — Up to +95C case temperature (per datasheet conditions)
Lead Free — Yes
无卤 — Yes
Packaging Suffix — -R = Tape and Reel
CAS 延迟 — [DATA_NEEDED: CL value for UH grade]

数据手册与资源

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