H5AN4G8NBJR-UHC vs H5AN4G6NBJR-UHC 对比

详细并排对比 H5AN4G8NBJR-UHC 出自 SK hynix 和 H5AN4G6NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-UHC H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC ✓ 量产中
SK hynix
H5AN4G6NBJR-UHC H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC ✓ 量产中

规格对比

参数 H5AN4G8NBJR-UHC H5AN4G6NBJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.18 $8.09
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit —
存储组织 512M x 8 256M x 16
数据速率 2400 Mbps (PC2400) —
电源电压 1.2 V —
接口 DDR4 (JEDEC) —
封装 TFBGA-78 (11 x 7.5 mm) FBGA-96 (PBGA-96)
安装类型 Surface Mount Surface Mount
Technology CMOS DRAM CMOS
Lifecycle Code Active —
RoHS 状态 Compliant (Rohs Code: Yes) Compliant
REACH Compliance Compliant —
Manufacturer SK Hynix Inc. —
工作温度 [DATA_NEEDED: operating temperature range] -40C to +95C
CAS 延迟 [DATA_NEEDED: CAS latency for -UHC speed bin] —
Refresh [DATA_NEEDED: refresh rate 1x/2x/4x support] —
存储容量 — 4 Gbit
Clock Frequency — 1.6 GHz
Supply Voltage (VDD) — 1.14 V to 1.26 V
Self Refresh — Auto self-refresh
Data Mask Function — Yes (DM)
Asynchronous Reset — Yes (RESET_n)
On-Die Termination — Dynamic ODT
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes (command/address CRC)

数据手册与资源

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