H5AN4G8NBJR-UHC vs K4A4G085WD-BCTD 对比
详细并排对比 H5AN4G8NBJR-UHC 出自 SK hynix 和 K4A4G085WD-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ 量产中规格对比
| 参数 | H5AN4G8NBJR-UHC | K4A4G085WD-BCTD |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.18 | $2.05 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2400 Mbps (PC2400) | 2666 Mbps/pin |
| 电源电压 | 1.2 V | 1.2 V |
| 接口 | DDR4 (JEDEC) | DDR4 (JEDEC-compatible) |
| 封装 | TFBGA-78 (11 x 7.5 mm) | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Lifecycle Code | Active | — |
| RoHS 状态 | Compliant (Rohs Code: Yes) | [DATA_NEEDED: RoHS compliance status] |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| CAS 延迟 | [DATA_NEEDED: CAS latency for -UHC speed bin] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | — |
| Die Generation | — | D-die |
| Ball Pitch | — | 0.8 mm |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |