H5AN4G8NBJR-VKI vs H5AN4G8NBJR-RDC 对比
详细并排对比 H5AN4G8NBJR-VKI 出自 SK hynix 和 H5AN4G8NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G8NBJR-VKI | H5AN4G8NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.98 | $2.95 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2666 Mbps | [DATA_NEEDED: speed grade Mbps] |
| 电源电压 | 1.2 V | [DATA_NEEDED: VDD supply voltage] |
| I/O Voltage | 1.2 V (SSTL12) | — |
| 封装 | FBGA-78 | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade | V (2666) | — |
| Temperature Grade | Industrial (I suffix) | [DATA_NEEDED: operating temperature range] |
| Architecture | CMOS, 8n prefetch, bank groups | — |
| Termination | On-Die Termination (ODT) | On-Die Termination (ODT) |
| DBI Support | Yes (Data Bus Inversion / DM) | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Auto-refresh and self-refresh |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | Lead-Free & Halogen-Free (RoHS Compliant) |
| 接口 | — | DDR4 (Double Data Rate IV) |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |