H5AN4G8NBJR-VKI vs H5AN4G8NBJR-VKIR 对比

详细并排对比 H5AN4G8NBJR-VKI 出自 SK hynix 和 H5AN4G8NBJR-VKIR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-VKI H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI ✓ 量产中
SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ 量产中

规格对比

参数 H5AN4G8NBJR-VKI H5AN4G8NBJR-VKIR
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.98 $1.98
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 4 Gb
存储组织 512M x 8 512M x 8
数据速率 2666 Mbps 2666 Mbps per pin
电源电压 1.2 V —
I/O Voltage 1.2 V (SSTL12) —
封装 FBGA-78 78-ball FBGA
安装类型 Surface Mount Surface Mount
Speed Grade V (2666) —
Temperature Grade Industrial (I suffix) —
Architecture CMOS, 8n prefetch, bank groups —
Termination On-Die Termination (ODT) —
DBI Support Yes (Data Bus Inversion / DM) —
CAS 延迟 [DATA_NEEDED: CAS Latency] [DATA_NEEDED: CAS latency]
工作温度 [DATA_NEEDED: Operating Temperature] —
Refresh [DATA_NEEDED: Refresh specification] [DATA_NEEDED: refresh interval specification]
RoHS 状态 [DATA_NEEDED: RoHS Status] —
Supply Voltage (VDD) — 1.2 V
Operating Temperature (Industrial) — -40C to +85C (case)
Extended Temperature Range — +85C to +95C (case, per datasheet conditions)
Technology — CMOS DRAM
Product Family — H5AN4G4/6/8NBJR series
Speed Grade Code — -VKI
Packing Suffix — R (Tape & Reel)
VPP Supply — [DATA_NEEDED: VPP supply voltage]
Package Dimensions — [DATA_NEEDED: package dimensions]

数据手册与资源

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