H5AN8G4NCJR-XXC vs H5AN8G6NCJR-XXC 对比
详细并排对比 H5AN8G4NCJR-xxC 出自 SK hynix 和 H5AN8G6NCJR-xxC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G4NCJR-xxC | H5AN8G6NCJR-xxC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.50 | $6.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| 存储组织 | x4 (H5AN8G4NCJR) | 512M x 16 |
| 电源电压 | 1.2V | — |
| 数据速率 | [DATA_NEEDED: speed grade from xxC suffix] | 2666 Mbps (VKC speed grade) |
| 封装 | FBGA | 96-ball FBGA |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | — |
| 安装类型 | Surface Mount | Surface Mount |
| Prefetch | 8-bit | — |
| Burst Length | 8 (BL8) | 8, 4 (with burst chop) |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes | — |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Supply | — | 2.5 V |
| Operating Temperature (TC) | — | 0°C to 95°C |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Supported |
| Self-Refresh | — | Temperature-compensated (TCSR) |