H5AN8G6NAFR-UHC vs H5AN8G6NAFR-RDC 对比

详细并排对比 H5AN8G6NAFR-UHC 出自 SK hynix 和 H5AN8G6NAFR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC ✓ 量产中
SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ 量产中

规格对比

参数 H5AN8G6NAFR-UHC H5AN8G6NAFR-RDC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.74 $3.05
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
存储组织 512M x 16 512M x 16
电源电压 1.2 V 1.2 V
数据速率 2400 MT/s —
封装 FBGA-96 —
工作温度 0°C to +85°C [DATA_NEEDED: operating temperature range]
Number of Terminals 96 96
Package Code TFBGA TFBGA
Lead-Free Yes —
无卤 Yes —
RoHS Compliant Yes —
CAS 延迟 [DATA_NEEDED: CAS Latency] —
Burst Length 8, 4 (with burst chop) —
Refresh Auto self-refresh —
Memory Density — 8 Gb
接口 — DDR4 (JEDEC-standard)
Access Mode — Multi Bank Page Burst
Package Shape — Rectangular
安装类型 — Surface Mount
Temperature Grade — OTHER (per Partstack listing)
Technology — CMOS
RoHS 状态 — Compliant (Lead-Free & Halogen-Free)
Speed Grade — -RDC (see datasheet for bin timing)
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Max Clock Rate — [DATA_NEEDED: max clock rate for -RDC bin]

数据手册与资源

浏览全部产品 创建 BOM 获取报价