H5AN8G6NCJR-UHC vs H5AN8G6NCJR-VKC 对比

详细并排对比 H5AN8G6NCJR-UHC 出自 SK hynix 和 H5AN8G6NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NCJR-UHC H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix

H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix

H5AN8G6NCJR-UHC ✓ 量产中
SK hynix
H5AN8G6NCJR-VKC H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-VKC ✓ 量产中

规格对比

参数 H5AN8G6NCJR-UHC H5AN8G6NCJR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $60.00
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
存储组织 512M x 16 512M x 16
Speed Grade DDR4-2400 (2400 Mbps/pin) —
电源电压 1.2 V —
封装 FBGA-96 (96-ball) FBGA-96
安装类型 Surface Mount (BGA) —
工作温度 0C to +95C 0°C to +95°C
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask (DM) Yes —
Write Leveling Yes —
CRC Function Yes —
Dynamic On-Die Termination Yes —
ZQ Calibration Yes —
Lead-Free / Halogen-Free Yes (per family datasheet) —
RoHS 状态 [DATA_NEEDED: RoHS certification statement] —
数据速率 — 2666 Mbps
Supply Voltage (VDD) — 1.2 V (1.14V to 1.26V)
Operating Current (IDD2N) — 28 mA
Operating Current (IDD4R) — 45 mA
Burst Length — 8 (BC4)
CAS 延迟 — [DATA_NEEDED: CAS Latency]
Row Address Bits — [DATA_NEEDED: Row Address Bits]
Column Address Bits — [DATA_NEEDED: Column Address Bits]
Lead-Free — Yes
无卤 — Yes
RoHS — Compliant

数据手册与资源

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