H5AN8G6NCJR-VKC vs NT6AN8T6WBJ1B1 对比
详细并排对比 H5AN8G6NCJR-VKC 出自 SK hynix 和 NT6AN8T6WBJ1B1 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NCJR-VKC | NT6AN8T6WBJ1B1 |
|---|---|---|
| 品牌 | SK hynix | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $60.00 | $8.75 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 2666 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| 工作温度 | 0°C to +95°C | 0C to +95C (TC) |
| 封装 | FBGA-96 | 96-ball FBGA |
| Operating Current (IDD2N) | 28 mA | — |
| Operating Current (IDD4R) | 45 mA | — |
| Burst Length | 8 (BC4) | 8 (BL8), 4 (BC4) |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | 22 cycles |
| Row Address Bits | [DATA_NEEDED: Row Address Bits] | — |
| Column Address Bits | [DATA_NEEDED: Column Address Bits] | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS | Compliant | — |
| 存储容量 | — | 8 Gb (512M x 16) |
| 电源电压 | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Refresh | — | Auto-refresh, self-refresh |
| On-Die Termination | — | Yes (ODT) |
| Bank Groups | — | 4 groups of 4 banks |
| Row Address | — | 16 bits |
| Column Address | — | 10 bits |
| RoHS 状态 | — | Compliant |