H5AN8G6NCJR-VKC vs NT6AN8T6WBJ1B1 Comparison
Detailed side-by-side comparison of H5AN8G6NCJR-VKC by SK hynix and NT6AN8T6WBJ1B1 by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NCJR-VKC | NT6AN8T6WBJ1B1 |
|---|---|---|
| Brand | SK hynix | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $60.00 | $8.75 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 2666 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| Operating Temperature | 0°C to +95°C | 0C to +95C (TC) |
| Package | FBGA-96 | 96-ball FBGA |
| Operating Current (IDD2N) | 28 mA | — |
| Operating Current (IDD4R) | 45 mA | — |
| Burst Length | 8 (BC4) | 8 (BL8), 4 (BC4) |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 22 cycles |
| Row Address Bits | [DATA_NEEDED: Row Address Bits] | — |
| Column Address Bits | [DATA_NEEDED: Column Address Bits] | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS | Compliant | — |
| Memory Size | — | 8 Gb (512M x 16) |
| Supply Voltage | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Refresh | — | Auto-refresh, self-refresh |
| On-Die Termination | — | Yes (ODT) |
| Bank Groups | — | 4 groups of 4 banks |
| Row Address | — | 16 bits |
| Column Address | — | 10 bits |
| RoHS Status | — | Compliant |