H5AN8G8NAFR-RDC vs H5AN8G8NAFR-VKC 对比

详细并排对比 H5AN8G8NAFR-RDC 出自 SK hynix 和 H5AN8G8NAFR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NAFR-RDC H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC ✓ 量产中
SK hynix
H5AN8G8NAFR-VKC H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC ✓ 量产中

规格对比

参数 H5AN8G8NAFR-RDC H5AN8G8NAFR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.95 $4.15
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
存储组织 1G x 8 (x8) 1G x 8
接口 DDR4 (Double Data Rate 4) SSTL12
Speed Grade -RDC (DDR4-2666 class) DDR4-2666 (VKC bin)
数据速率 2666 MT/s (per -R speed grade suffix) —
Core Supply Voltage (VDD) 1.2 V —
I/O Supply Voltage (VDDQ) 1.2 V —
Wordline Supply (VPP) 2.5 V —
Banks / Bank Groups 16 banks / 4 bank groups (DDR4 8Gb architecture) —
Burst Length 8 (BL8) 8 (BL8)
CAS 延迟 [DATA_NEEDED: CAS Latency] —
封装 78-ball FBGA 78-ball FBGA
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: Operating Temperature range] [DATA_NEEDED: operating temperature range]
Lead-Free Yes —
无卤 Yes —
RoHS 状态 Compliant Compliant (Lead-Free & Halogen-Free)
Datasheet Revision Rev. 1.2 / Jul. 2017 —
Supply Voltage (VDD) — 1.2 V
Bank Group Architecture — Supported (per DDR4 JEDEC architecture)
On-Die Termination (ODT) — Yes
DLL — Yes (DLL for output skew control)
Process Technology — CMOS
Recommended Application — Main memory requiring large density and high bandwidth

数据手册与资源

浏览全部产品 创建 BOM 获取报价