H5AN8G8NCJR-VKC vs MT40A1G8AG-062E 对比
详细并排对比 H5AN8G8NCJR-VKC 出自 SK hynix 和 MT40A1G8AG-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NCJR-VKC | MT40A1G8AG-062E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $28.13 | $3.10 |
| 存储器类型 | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| 存储容量 | 8 Gbit | 8 Gbit |
| Memory Organization | 1G x 8 | — |
| 数据速率 | 2666 Mbps/pin | — |
| Clock Frequency | 1.6 GHz | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | 1.2 V |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| 工作温度 | 0C to +85C | — |
| 封装 | FBGA-78 (78-ball fine-pitch BGA) | 78-FBGA (7.5 x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 接口 | Parallel (DDR4) | Parallel |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh period] | [DATA_NEEDED: refresh rate] |
| 存储组织 | — | 1G x 8 |
| Clock Cycle Time | — | 19 ns class (-062E speed grade) |
| Temperature Grade | — | Automotive (AUT) |
| Access Time (CAS Latency class) | — | DDR4-3200 timing class (tAA per datasheet) |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| Termination | — | On-Die Termination (ODT) |
| CA Parity | — | Supported (DDR4 command/address parity) |
| Packaging Option | — | Tape and Reel (TR / :R suffix) |
| 工作温度范围 | — | [DATA_NEEDED: operating temperature range] |