H5AN8G8NCJR-VKI vs H5AN8G8NCJR-VKC 对比

详细并排对比 H5AN8G8NCJR-VKI 出自 SK hynix 和 H5AN8G8NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NCJR-VKI H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI ✓ 量产中
SK hynix
H5AN8G8NCJR-VKC H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC ✓ 量产中

规格对比

参数 H5AN8G8NCJR-VKI H5AN8G8NCJR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.85 $28.13
存储器类型 DDR4 SDRAM DDR4 SDRAM (volatile)
存储容量 8 Gb 8 Gbit
Memory Organization 1G x8 1G x 8
数据速率 2666 Mbps 2666 Mbps/pin
电源电压 1.2 V —
接口 Parallel Parallel (DDR4)
Memory Format DRAM —
Volatile Yes —
封装 FBGA-78 FBGA-78 (78-ball fine-pitch BGA)
安装类型 Surface Mount Surface Mount
Grade Industrial (I suffix) —
工作温度 [DATA_NEEDED: Operating Temperature] 0C to +85C
Technology CMOS —
Product Family H5AN8G8NCJR-xxC/xI DDR4 SDRAM —
Packaging Tray —
Product Status Active —
RoHS 状态 [DATA_NEEDED: RoHS Status] Compliant
Clock Frequency — 1.6 GHz
Supply Voltage (VDD) — 1.14 V to 1.26 V (1.2 V class)
Operating Current (typ) — 30 mA
Standby Current (typ) — 3 mA
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
CAS 延迟 — [DATA_NEEDED: CAS Latency]
Refresh Rate — [DATA_NEEDED: refresh period]

数据手册与资源

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