H5AN8G8NDJR vs K4A8G085WB-BIWE 对比
详细并排对比 H5AN8G8NDJR 出自 SK hynix 和 K4A8G085WB-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NDJR | K4A8G085WB-BIWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $24.50 | $6.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 1G x 8 | — |
| 数据速率 | 3200 MT/s | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| VDDQ | 1.2 V | — |
| VPP | 2.5 V | — |
| 工作温度 | 0°C to +95°C (Tc) | 0°C to +85°C |
| 封装 | FBGA-78 (7.5x11 mm) | 78-FBGA |
| CAS 延迟 | 22 (typical) | [DATA_NEEDED: CL value] |
| tRCD | 22 ns | — |
| tRP | 22 ns | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| Self-Refresh Current | 30 mA (typical) | — |
| Active Standby Current | 60 mA (typical) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| 电源电压 | — | 1.2 V |
| 安装类型 | — | Surface Mount |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Refresh | — | Auto-refresh, self-refresh |
| RoHS 状态 | — | Compliant |
| 无卤 | — | Yes |