H5AN8G8NDJR vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of H5AN8G8NDJR by SK hynix and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BIWE
K4A8G085WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G085WB-BIWE β ActiveSpecification Comparison
| Parameter | H5AN8G8NDJR | K4A8G085WB-BIWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.50 | $6.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 1G x 8 | β |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | β |
| VDDQ | 1.2 V | β |
| VPP | 2.5 V | β |
| Operating Temperature | 0Β°C to +95Β°C (Tc) | 0Β°C to +85Β°C |
| Package | FBGA-78 (7.5x11 mm) | 78-FBGA |
| CAS Latency | 22 (typical) | [DATA_NEEDED: CL value] |
| tRCD | 22 ns | β |
| tRP | 22 ns | β |
| Burst Length | 8 and 4 (with burst chop) | β |
| Self-Refresh Current | 30 mA (typical) | β |
| Active Standby Current | 60 mA (typical) | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | Yes |
| Memory Size | β | 8 Gb |
| Memory Organization | β | 1G x 8 |
| Supply Voltage | β | 1.2 V |
| Mounting Type | β | Surface Mount |
| Memory Interface | β | Parallel |
| Access Time | β | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Refresh | β | Auto-refresh, self-refresh |
| RoHS Status | β | Compliant |
| Halogen-Free | β | Yes |