H5AN8G8NDJR vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of H5AN8G8NDJR by SK hynix and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NDJR | K4A8G085WB-BIWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 1G x 8 | — |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| VDDQ | 1.2 V | — |
| VPP | 2.5 V | — |
| Operating Temperature | 0°C to +95°C (Tc) | 0°C to +85°C |
| Package | FBGA-78 (7.5x11 mm) | 78-FBGA |
| CAS Latency | 22 (typical) | [DATA_NEEDED: CL value] |
| tRCD | 22 ns | — |
| tRP | 22 ns | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| Self-Refresh Current | 30 mA (typical) | — |
| Active Standby Current | 60 mA (typical) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Supply Voltage | — | 1.2 V |
| Mounting Type | — | Surface Mount |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Refresh | — | Auto-refresh, self-refresh |
| RoHS Status | — | Compliant |
| Halogen Free | — | Yes |