H5ANAG6NCMR-XNI vs H5ANAG6NCJR-XN 对比
详细并排对比 H5ANAG6NCMR-XNI 出自 SK hynix 和 H5ANAG6NCJR-XN 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NCMR-XNI | H5ANAG6NCJR-XN |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.95 | $71.20 |
| 存储器类型 | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| 存储容量 | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| 数据速率 | 3200 Mbps (DDR4-3200, XN speed bin) | 3200 Mbps/pin (DDR4-3200) |
| 电源电压 | 1.2 V | — |
| Technology | CMOS Double Data Rate IV Synchronous DRAM | — |
| Power Class | Normal Power | — |
| 封装 | FBGA-96 | FBGA-96 (96-ball) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 接口 | Parallel (DDR4) | — |
| Product Status | Active | — |
| Application Domain | Main memory, industrial controllers, computing modules, consumer electronics | — |
| Memory Format | DRAM | — |
| Speed Bin Family | UH/VK/WM/XN | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| VPP Supply Voltage | [DATA_NEEDED: VPP Supply Voltage] | — |
| MSL 等级 | [DATA_NEEDED: MSL Level] | — |
| Density | — | 16 Gbit (1G x 16) |
| 存储组织 | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Package Width | — | 8 mm |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC (Command/Address) | — | Yes |
| Write Leveling | — | Yes |
| Maximum Standby Current | — | 0.074 A (per Vyrian listing) |
| RoHS 状态 | — | Compliant |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency for -XN speed grade] |