H5ANAG6NCMR-XNI vs H5ANAG6NCJR-XN Comparison
Detailed side-by-side comparison of H5ANAG6NCMR-XNI by SK hynix and H5ANAG6NCJR-XN by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5ANAG6NCMR-XNI | H5ANAG6NCJR-XN |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.95 | $71.20 |
| Memory Type | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Memory Size | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Data Rate | 3200 Mbps (DDR4-3200, XN speed bin) | 3200 Mbps/pin (DDR4-3200) |
| Supply Voltage | 1.2 V | — |
| Technology | CMOS Double Data Rate IV Synchronous DRAM | — |
| Power Class | Normal Power | — |
| Package | FBGA-96 | FBGA-96 (96-ball) |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Interface | Parallel (DDR4) | — |
| Product Status | Active | — |
| Application Domain | Main memory, industrial controllers, computing modules, consumer electronics | — |
| Memory Format | DRAM | — |
| Speed Bin Family | UH/VK/WM/XN | — |
| Operating Temperature | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| VPP Supply Voltage | [DATA_NEEDED: VPP Supply Voltage] | — |
| MSL Level | [DATA_NEEDED: MSL Level] | — |
| Density | — | 16 Gbit (1G x 16) |
| Organization | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Package Width | — | 8 mm |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC (Command/Address) | — | Yes |
| Write Leveling | — | Yes |
| Maximum Standby Current | — | 0.074 A (per Vyrian listing) |
| RoHS Status | — | Compliant |
| CAS Latency | — | [DATA_NEEDED: CAS latency for -XN speed grade] |