H5ANAG8NAMR-UHC vs H5ANAG8NCJR-XNC 对比

详细并排对比 H5ANAG8NAMR-UHC 出自 SK hynix 和 H5ANAG8NCJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG8NAMR-UHC H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC ✓ 量产中
SK hynix
H5ANAG8NCJR-XNC H5ANAG8NCJR-XNC - 16Gb DDR4-3200 SDRAM 2Gx8 | SK Hynix

H5ANAG8NCJR-XNC - 16Gb DDR4-3200 SDRAM 2Gx8 | SK Hynix

H5ANAG8NCJR-XNC ✓ 量产中

规格对比

参数 H5ANAG8NAMR-UHC H5ANAG8NCJR-XNC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.15 $65.63
Manufacturer SK Hynix —
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit 16 Gbit
存储组织 2G x 8 2G x 8
数据速率 DDR4-2400 (2400 MT/s) 3200 MT/s (DDR4-3200)
电源电压 1.2 V —
封装 FBGA-78 FBGA-78 (7.5 x 11 mm)
安装类型 Surface Mount Surface Mount
接口 Parallel, DDR4 —
Bank Group Architecture DDR4 bank-group architecture —
On-Die Termination (ODT) Yes —
工作温度 [DATA_NEEDED: operating temperature range] 0C to +95C
Refresh Self-refresh and auto-refresh (DDR4) [DATA_NEEDED: refresh specification]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
RoHS 状态 Compliant (lead-free FBGA package) Compliant
Applications Data storage, firmware boot, industrial controllers, computing modules —
Supply Voltage (VDD) — 1.2 V
Process Node — 1z nm (non-EUV)
Die Bit Density — 0.296 Gb/mm2
Peak Bandwidth (per 64-bit channel) — 25.6 GB/s at DDR4-3200
CAS Latency (CL) — [DATA_NEEDED: CAS Latency]
Base Part Number Family — H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM)
Speed Grade Suffix — -XNC (0~95C commercial)

数据手册与资源

浏览全部产品 创建 BOM 获取报价