H5ANAG8NCMR-VKC vs H5ANAG6NCJR-XNC 对比
详细并排对比 H5ANAG8NCMR-VKC 出自 SK hynix 和 H5ANAG6NCJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NCMR-VKC | H5ANAG6NCJR-XNC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.05 | $84.97 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 16 Gb | 16 Gbit |
| Memory Organization | 2G x 8 | 1G x 16 |
| 数据速率 | 2666 Mbps/pin (DDR4-2666) | 3200 Mbps/pin |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 封装 | FBGA-78 | FBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | — |
| Banks Total | 16 | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging | [DATA_NEEDED: standard packing quantity] | Tray |
| Manufacturer Process | CMOS DRAM | — |
| Supply Voltage Range | — | 1.14 V to 1.26 V (VDD/VDDQ) |
| 接口 | — | Parallel |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |