H5TC4G63AFR-PBI vs IS43TR16256AL-125KBLI-TR 对比

详细并排对比 H5TC4G63AFR-PBI 出自 SK hynix 和 IS43TR16256AL-125KBLI-TR 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63AFR-PBI H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ 量产中

规格对比

参数 H5TC4G63AFR-PBI IS43TR16256AL-125KBLI-TR
品牌 SK hynix ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 Obsolete 有效
库存状态 有库存 有库存
单价(USD) $6.50 $8.25
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储组织 256M x 16 —
Total Memory Size 4 Gb —
数据速率 DDR3-1600 (PC3L-12800) 1600 Mbps
电源电压 1.35 V —
Number of Banks 8 —
Burst Length 8 (BL8) 8
CAS 延迟 Programmable 11
On-Die Termination (ODT) Yes Yes
Refresh Period 7.8 us at 85°C —
工作温度范围 -40°C to +95°C -40°C to +95°C (TC)
封装 96-ball FBGA (TFBGA, BGA96, 9x16, 32) 96-TWBGA (9x13 mm)
安装类型 Surface Mount Surface Mount
Number of Terminals 96 —
RoHS 状态 Compliant Compliant
存储容量 — 4Gbit (256M x 16)
数据总线宽度 — 16 bit
Clock Frequency — 800 MHz
Supply Voltage (VDD/VDDQ) — 1.35V ± 0.1V, -0.067V
Backward Compatible Voltage — 1.5V
Row Cycle Time (tRC) — 20 ns
Row Active Time (tRAS) — 20 ns
Refresh Modes — Auto-refresh, Self-refresh

数据手册与资源

浏览全部产品 创建 BOM 获取报价