H5TC4G63AFR-PBI vs IS43TR16256AL-125KBLI-TR Comparison

Detailed side-by-side comparison of H5TC4G63AFR-PBI by SK hynix and IS43TR16256AL-125KBLI-TR by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63AFR-PBI

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR βœ“ Active

Specification Comparison

Parameter H5TC4G63AFR-PBI IS43TR16256AL-125KBLI-TR
Brand SK hynix ISSI, Integrated Silicon Solution Inc
Category Memory ICs Memory ICs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $6.50 $8.25
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 β€”
Total Memory Size 4 Gb β€”
Data Rate DDR3-1600 (PC3L-12800) 1600 Mbps
Supply Voltage 1.35 V β€”
Number of Banks 8 β€”
Burst Length 8 (BL8) 8
CAS Latency Programmable 11
On-Die Termination (ODT) Yes Yes
Refresh Period 7.8 us at 85Β°C β€”
Operating Temperature Range -40Β°C to +95Β°C -40Β°C to +95Β°C (TC)
Package 96-ball FBGA (TFBGA, BGA96, 9x16, 32) 96-TWBGA (9x13 mm)
Mounting Type Surface Mount Surface Mount
Number of Terminals 96 β€”
RoHS Status Compliant Compliant
Memory Size β€” 4Gbit (256M x 16)
Data Bus Width β€” 16 bit
Clock Frequency β€” 800 MHz
Supply Voltage (VDD/VDDQ) β€” 1.35V Β± 0.1V, -0.067V
Backward Compatible Voltage β€” 1.5V
Row Cycle Time (tRC) β€” 20 ns
Row Active Time (tRAS) β€” 20 ns
Refresh Modes β€” Auto-refresh, Self-refresh

Datasheets & Resources

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