H5TC4G63CFR-H9A vs K4B4G1646E-BYK0 对比
详细并排对比 H5TC4G63CFR-H9A 出自 SK hynix 和 K4B4G1646E-BYK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5TC4G63CFR-H9A | K4B4G1646E-BYK0 |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $1.80 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Memory Density | 4Gb (4294967296 bit) | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD) | 1.35V + 0.100 / - 0.067V | — |
| Supply Voltage (VDDQ) | 1.35V + 0.100 / - 0.067V | — |
| 封装 | 96-ball TFBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Terminals | 96 | — |
| Package Shape | RECTANGULAR | — |
| 工作温度范围 | [DATA_NEEDED: Operating temperature range] | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| 数据速率 | [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] | DDR3-1600 (800 MHz) |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | 11 (CL-tRCD-tRP) |
| Burst Length | 8, 4 (with burst chop) | 8 (fixed), 4 (burst chop) |
| Differential Clock Inputs | Yes (CK, CK) | — |
| Differential Data Strobe | Yes (DQS, DQS) | — |
| On-Chip DLL | Yes | — |
| DM (Data Mask) | Yes | — |
| Density | — | 4 Gb |
| 电源电压 | — | 1.35 V (1.283 V to 1.45 V) |
| 工作温度 | — | 0°C to +95°C (TC) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |