H5TC4G63CFR-H9A vs K4B4G1646E-BYK0 Comparison

Detailed side-by-side comparison of H5TC4G63CFR-H9A by SK hynix and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63CFR-H9A

H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A βœ“ Active
Samsung Electronics
K4B4G1646E-BYK0

K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646E-BYK0 βœ“ Active

Specification Comparison

Parameter H5TC4G63CFR-H9A K4B4G1646E-BYK0
Brand SK hynix Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.50 $1.80
Memory Type DDR3L SDRAM DDR3L SDRAM
Memory Density 4Gb (4294967296 bit) β€”
Organization 256M x 16 256M x 16
Supply Voltage (VDD) 1.35V + 0.100 / - 0.067V β€”
Supply Voltage (VDDQ) 1.35V + 0.100 / - 0.067V β€”
Package 96-ball TFBGA 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Number of Terminals 96 β€”
Package Shape RECTANGULAR β€”
Operating Temperature Range [DATA_NEEDED: Operating temperature range] β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
Halogen-Free Yes β€”
Data Rate [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] DDR3-1600 (800 MHz)
CAS Latency [DATA_NEEDED: CAS latency] 11 (CL-tRCD-tRP)
Burst Length 8, 4 (with burst chop) 8 (fixed), 4 (burst chop)
Differential Clock Inputs Yes (CK, CK) β€”
Differential Data Strobe Yes (DQS, DQS) β€”
On-Chip DLL Yes β€”
DM (Data Mask) Yes β€”
Density β€” 4 Gb
Supply Voltage β€” 1.35 V (1.283 V to 1.45 V)
Operating Temperature β€” 0Β°C to +95Β°C (TC)
On-Die Termination β€” Yes (dynamic ODT)
ZQ Calibration β€” Yes
Auto Precharge β€” Yes
Self-Refresh β€” Yes
Asynchronous Reset β€” Yes
Data Mask β€” Yes
RoHS β€” Compliant

Datasheets & Resources

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