H5TC4G63CFR-H9J vs IS43TR16256AL-125KBLI-TR 对比

详细并排对比 H5TC4G63CFR-H9J 出自 SK hynix 和 IS43TR16256AL-125KBLI-TR 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63CFR-H9J H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ 量产中

规格对比

参数 H5TC4G63CFR-H9J IS43TR16256AL-125KBLI-TR
品牌 SK hynix ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.00 $8.25
存储器类型 DDR3L SDRAM DDR3L SDRAM
Density 4Gb —
存储组织 256M x 16 —
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V 1.35V ± 0.1V, -0.067V
Speed Grade -H9 (1866 Mbps / PC3-14900) —
封装 96-ball TFBGA 96-TWBGA (9x13 mm)
Number of Terminals 96 —
Temperature Grade Industrial —
Lead-Free Yes —
无卤 Yes —
RoHS Compliant Yes —
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-Chip DLL Yes —
Data Mask (DM) Yes —
存储容量 — 4Gbit (256M x 16)
数据总线宽度 — 16 bit
Clock Frequency — 800 MHz
数据速率 — 1600 Mbps
CAS 延迟 — 11
Backward Compatible Voltage — 1.5V
Row Cycle Time (tRC) — 20 ns
Row Active Time (tRAS) — 20 ns
工作温度范围 — -40°C to +95°C (TC)
安装类型 — Surface Mount
Burst Length — 8
On-Die Termination (ODT) — Yes
Refresh Modes — Auto-refresh, Self-refresh
RoHS 状态 — Compliant

数据手册与资源

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