IAUC100N10S5L054ATMA1 vs IAUCN10S5L110TATMA1 对比

详细并排对比 IAUC100N10S5L054ATMA1 出自 Infineon 和 IAUCN10S5L110TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N10S5L054ATMA1 IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 ✓ 量产中
Infineon
IAUCN10S5L110TATMA1 IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon

IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon

IAUCN10S5L110TATMA1 ✓ 量产中

规格对比

参数 IAUC100N10S5L054ATMA1 IAUCN10S5L110TATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.92 $2.08
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 (IAUC automotive family) OptiMOS 5
晶体管类型 N-Channel MOSFET —
Drain-to-Source Voltage (V_DS) 100 V —
Gate-to-Source Voltage (V_GS) [DATA_NEEDED: max V_GS value] —
Continuous Drain Current (I_D, Tj) 101 A —
Power Dissipation (P_D, Tc) 130 W —
R_DS(on) max at V_GS=10V 5.4 mΩ —
工作温度范围 -55°C to +175°C —
封装 PG-TDSON-8-34 (surface mount) PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
安装类型 Surface Mount Surface Mount
Qualification AEC-Q101 (automotive) —
Technology OptiMOS 5 trench N-Channel MOSFET, Trench, Logic Level
MSL 等级 [DATA_NEEDED: MSL rating] MSL1 (260°C peak reflow)
RoHS 状态 Compliant Compliant
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tj — 61 A
On-Resistance RDS(on) max at VGS=10V — 11.3 mΩ
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc — 88 W
工作结温 — -55 °C to +175 °C
Storage Temperature — [DATA_NEEDED: storage temperature]
Avalanche Rated — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Extended Qualification

数据手册与资源

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