IAUC100N10S5L054ATMA1 vs IAUCN10S5L110TATMA1 Comparison

Detailed side-by-side comparison of IAUC100N10S5L054ATMA1 by Infineon and IAUCN10S5L110TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N10S5L054ATMA1

IAUC100N10S5L054ATMA1 - 100V 5.4mΞ© N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 βœ“ Active
Infineon
IAUCN10S5L110TATMA1

IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon

IAUCN10S5L110TATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N10S5L054ATMA1 IAUCN10S5L110TATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.92 $2.08
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 (IAUC automotive family) OptiMOS 5
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (V_DS) 100 V β€”
Gate-to-Source Voltage (V_GS) [DATA_NEEDED: max V_GS value] β€”
Continuous Drain Current (I_D, Tj) 101 A β€”
Power Dissipation (P_D, Tc) 130 W β€”
R_DS(on) max at V_GS=10V 5.4 mΞ© β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package PG-TDSON-8-34 (surface mount) PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (automotive) β€”
Technology OptiMOS 5 trench N-Channel MOSFET, Trench, Logic Level
MSL Level [DATA_NEEDED: MSL rating] MSL1 (260Β°C peak reflow)
RoHS Status Compliant Compliant
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at Tj β€” 61 A
On-Resistance RDS(on) max at VGS=10V β€” 11.3 mΞ©
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc β€” 88 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Storage Temperature β€” [DATA_NEEDED: storage temperature]
Avalanche Rated β€” 100% Avalanche Tested
Automotive Qualification β€” AEC-Q101 Extended Qualification

Datasheets & Resources

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