IAUCN04S7L006ATMA1 vs IAUCN04S7N009ATMA1 对比

详细并排对比 IAUCN04S7L006ATMA1 出自 Infineon 和 IAUCN04S7N009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ 量产中
Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7L006ATMA1 IAUCN04S7N009ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.38 $1.55
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A 175 A
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
工作温度范围 -55 °C to +175 °C —
封装 PG-TDSON-8-43 PG-TDSON-8-34 (Surface Mount)
安装类型 Surface Mount Surface Mount
Technology OptiMOS-7 trench MOSFET (Metal Oxide)
Automotive Qualified Yes (AEC-Q101) —
RoHS 状态 Compliant Compliant
引脚数量 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Drain-to-Source Voltage (V_DSS) — 40 V
R_DS(on) Max @ V_GS = 10 V — 0.96 mΩ
Gate Drive Voltage (V_GS) — 10 V
工作温度 — -55C to +175C
Qualification — AEC-Q101 (Automotive)
MSL 等级 — 1
Configuration — Single N-Channel
Supplier Device Package — PG-TDSON-8-34

数据手册与资源

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